华宏2017年-8-Power-Device-IGBT.pptxVIP

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华宏2017年-8-Power-Device-IGBT.pptx

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IGBT TechnologiesSMDAug, 2017SummaryDiscrete Power Devices OverviewIGBTDiscrete Power Devices OverviewIGBTSummaryPower Discrete Target Application IGBTCurrentPower TrainSmart GridSolarInverterWind PowerMotorControlWhiteGoodsWeldingMachineSJNFETMOSFETHEV/EVInductionCookerCloud serverSmall household appliancePCUPSLED lightingE-bikePortableUltrabookCharger……200V600V6500VVoltage8V1200VPower Devices Chronicle600V-1200V Trench FS(GDB) IGBT went into mass production3300V-6500V IGBT and FRD were demonstratedThe largest power device foundry Fab , accumulated power discrete wafer shipment exceeding 5 million including:MOSFET over 5 millionSJNFET over 200 thousandIGBT over 40 thousandHHGrace is the first 8-inch foundry worldwide offering Trench MOSFET process solutionSJNFET(CoolMos) I technology went into mass productionTrench MOSFETTrench SJ-I………………2015201420022010201320112017High density IGBT releasedSJNFET 2.5G releasedAdvanced Trench MOSFET technologies, such as TBO, SGT, e-SBD, etc. went into mass production1200V Trench NPT IGBT went into mass productionHigh voltage 600V-700V Trench/Planar MOSFET technology went into mass productionSJNFET III Phase I fixed for customer qualification;SJNFET III Phase II developing, 2017/Q4GDB fast IGBT releaseRC IGBT developingCool-IGBT (SJ IGBT)developingSJNFET II released600V-1200V Trench FS(FDB) IGBT went into mass productionHigh Density IGBTPitch Size:2.5umTrench SJ-III Phase IITrench SJ-III Phase ITrench NPT IGBTTrench HV MOSFETSGTDiscrete Power Devices OverviewIGBTSummaryIGBT Device Structure MigrationNon Punch ThroughLight Punch ThroughTrench + Field StopHHGrace FocusEpi-1 N- Epi-2 N+ SubFDB (Flat Doping Buffer) IGBTgategateN+N+P-P-Epi-1 N- Epi-1 N- Epi-2 N+ Epi-2 N+ Backside grinding (Taiko)SubStartFront side processgategateN+N+P-P-Epi-1 N- Epi-1 N- Epi-2 N+ Epi-2 N+ P+ layerP+ layerBack metalBackside implantBackside metalTapeGDB (Gradual Doping Buffer)gategateN+N+P-P-N- substrateBackside grinding(Taiko wafer)Front BondingN- su