arf光源净化与温控技术分析word格式论文.docxVIP

arf光源净化与温控技术分析word格式论文.docx

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arf光源净化与温控技术分析word格式论文

AbstractArF light source is one of the most critical components of projection lithography tool. There are only two companies who can provide ArF light source, one is in America and the other one is in Japan. Projection lithography tool is not only the most critical equipment in integrated circuits manufacturing, but also the one of main RD tasks of National Science and Technology Major Project, and there are only three companies in the world who are able to develop it. Purification technology and temperature control technology are the two key technologies of ArF light source. This thesis focused on the research of those two key technologies, provided appropriate technical solutions and completed an experimental verification of the solutions.In the ArF light source, purification unit and temperature control unit correspond to the two key technologies. Purification unit controls chamber pollution, stabilizes the performance of the optical system. By injecting purge gas into the chamber to from a slightly positive pressure to the external environment, purification unit is able to achieve the goal of chamber purification. Capillary is utilized to achieve slightly positive pressure control. A capillary is placed at the inlet of the chamber, and a throttle is placed at the outlet of the chamber. When the outside air pressure fluctuations, due capillary’s throttling and pressure maintaining characteristics, the slightly positive pressure can be kept stable. The temperature control unit controls the temperature the chambers, maintains the optical system’s performance. The plant cooling water is utilized in temperature control unit. By controlling the switching valve, temperature control unit is able to control the average flow rate of the cooling water, furthermore, to achieve temperature control of the chamber.In this thesis, the factors affecting the differential pressure of the chamber is analyzed, the relationship between the differential pressure change and the environ

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