第二章-1(光学光刻技术).pdf

第二章第一节：光学光刻 Chapter II: Photo Lithography 主流的微电子制造过程中，光刻是最 复杂、昂贵和关键的工艺。大概占成 本的1/3以上。 Content  Resolution in Photolithography  Exposure modes and their advantages and disadvantages  Photolithography resolution enhancement technology  Planarization  Alignment 2 Historical note:lithography’s origins Lithography [stone (lithos)+write (gráphein )]refer to a process invented in 1796 by Aloys Senefelder. He found that stone when properly inked and treated with chemicals, could transfer a carved image into paper.  1822, France, Nicéphore Niépce, copy an etch print on oiled paper using bitumen maskthe advent of photography;  1827, France, Lemaître, using strong acid made an engraving of Cardinal d’Amboise (一位红衣 主教的雕像). Resolution: 0.5~1 mm 3 Historical note:lithography developing  130 years later, in 1961, photo-etching process been used to produce a large number of transistor on a thin slice of Si wafer. Resolution: 5mm Today, photolithography, X-ray lithography, charge- particle lithography, all achieved submicro resolution. Resolution: ~10-190nm 4 Lithography Overview  Mask (掩模版)  Photoresist (光刻胶)  Spinning resist and soft baking (涂胶/前烘)  Exposure and post-exposure treatment(曝光)  Development (显影)  De-scumming and post-baking （去胶）  Inspections （检测） 6 光刻工艺的组成部分 7 （1）光刻胶/光阻 (Photoresist)