Silicon Carbide Coating on Graphite and （在石墨和碳化硅涂层）.pdfVIP

下载本文档

35
0
约1.92万字
约 4页
2017-09-02 发布于浙江
举报
版权申诉

Silicon Carbide Coating on Graphite and （在石墨和碳化硅涂层）.pdf

1、有哪些信誉好的足球投注网站（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。。
2、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。
4、该文档为VIP文档，如果想要下载，成为VIP会员后，下载免费。
5、成为VIP后，下载本文档将扣除1次下载权益。下载后，不支持退款、换文档。如有疑问请联系我们。
6、成为VIP后，您将拥有八大权益，权益包括：VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
7、VIP文档为合作方或网友上传，每下载1次，网站将根据用户上传文档的质量评分、类型等，对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档

Silicon Carbide Coating on Graphite and （在石墨和碳化硅涂层）

Carbon Vol. 8, No. 2 June 2007 pp. 91-94 Science Silicon Carbide Coating on Graphite and Isotropic C/C Composite by Chemical Vapour Reaction L. M. Manocha, Bharat Patel and S. Manocha♠ Department of Materials Science, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, India ♠e-mail: manocha52@ (Received February 26, 2007; Accepted March 30, 2007) Abstract o The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of 450 C or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency. Keywords : Carbothermal reduction, Graphite, Silicon carbide, Chemical vapor reaction 1. Introduction methods used for production of SiC are CVD, CVI, polymer