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量子点Quantum Dot Light Emitting Diode Featuring Polymeric Metal Oxide Anode Buffer Layer.pdf

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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 21, NO. 4, JULY/AUGUST 2015 1900206 Quantum-Dot Light-Emitting Diode Featuring Polymeric Metal Oxide Anode Buffer Layer Jae-Yeon Kim, Abd. Rashid bin Mohd. Yusoff, and Jin Jang Abstract—A highly efﬁcient quantum-dot light emitting Among all transition metal oxides, tungsten oxide (WO ) has 3 diode (QLED) featuring polymeric and metal oxide mix- a deep lying valence band as well as excellent hole-injection ture as a hole injection layer is demonstrated. The poly(3,4- properties into organic materials [22]–[26]. Recently, we have ethylenedioxythiophene) polystyrene sulfonate:tungsten oxide (PEDOT:PSS:WOx )-based QLEDs demonstrate signiﬁcantly demonstrated that the mixture of PEDOT:PSS and WO3 show higher performance compared to that of the PEDOT:PSS only- superior lifetime compared to that of PEDOT:PSS only organic based QLEDs. Observations indicate that the mixture of PE- photovoltaics [27]. At the same time, Yang et. al reported the DOT:PSS and WOx are promising solution-processed hole injec- use of PEDOT:PSS:WO3 ﬁlms as the HIL prepared by a sol–gel tion materials and can create a new pathway toward the next gen- method, resulting in all solution- processed QLEDs with the eration of QLED lighting and displays. 2 maximum brightness values of 30 006