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量子点Solution-processed quantum dot light emitting diodes with PANI PSS hole transport interlayers.pdf

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Organic Electronics 19 (2015) 131–139 Contents lists available at ScienceDirect Organic Electronics journal homepage: www.else /locate/orgel Solution-processed quantum dot light-emitting diodes with PANI:PSS hole-transport interlayers Young Ran Park a, Ji Hoon Doh b, Koo Shin a,b,⇑, Young Soo Seo c, Yun Seok Kim d, e f a,c,⇑ Soo Young Kim , Won Kook Choi , Young Joon Hong a Graphene Research Institute, Sejong University, Gwangjin-gu, Seoul 143-747, Republic of Korea b Department of Chemistry, Sejong University, Gwangjin-gu, Seoul 143-747, Republic of Korea c Department of Nanotechnology and Advanced Materials Engineering, Hybrid Materials Research Center, Sejong University, Gwangjin-gu, Seoul 143-747, Republic of Korea d School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea e School of Chemical Engineering and Materials Science, Chung-Ang University, Dongjak-gu, Seoul 156-756, Republic of Korea f Interface Control Research Center, Future Convergence Technology Research Division, Korea Institute of Science and Technology (KIST), Hwarangno 14 gil, Seoul 136-791, Republic of Korea a r t i c l e i n f o a b s t r a c t Article history: For solution-processed quantum dot light-emitting devices (QD-LEDs), poly(3,4-ethylene- Received 5 October 2014 dioxythiophene) polystyrene sulfonate/poly(N-vinylcarbozole) (PEDOT:PSS/PVK) bilayers Received in revised form 9 December 2014 have been widely used as the hole injection/transport layer. The high work