量子点Graphene Si Quantum-Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect.pdfVIP

www.advmat.de www.MaterialsV N Graphene/Si-Quantum-Dot Heterojunction Diodes O I T Showing High Photosensitivity Compatible with Quantum A C I Confi nement Effect N U M Dong Hee Shin, Sung Kim, Jong Min Kim, Chan Wook Jang, Ju Hwan Kim, M O Kyeong Won Lee, Jungkil Kim, Si Duck Oh, Dae Hun Lee, Soo Seok Kang, C Chang Oh Kim, Suk-Ho Choi,* and Kyung Joong Kim Photodetectors (PDs) are widely used for a variety of applica- selective control of the PD-detection range. SiO2 is known to tions, such as biomedical imaging, remote sensing, and optical be hydrophilic and thus well-bonded with graphene by van der communications. Si is a principal material for the use as a com- Waals interaction, which makes it possible for SQDs-embedded mercial PD product in the visible and near infrared (VIS-NIR) SiO (SQDs:SiO ) to form a good electrical junction with gra- 2 2 range, but is not available for ultraviolet (UV) photodetection phene without further processes. In this work, we report fi rst due to the heat-induced lifetime reduction.[ 1 ] Compound semi- fabrication of graphene/SQDs:SiO2 multilayers (MLs)-heter- conductors with large bandgap energies are currently employed ojunction diodes showing high photoresponse that is lower- for PDs in the UV range,[ 2,3 ] but their fabrication processes are noise, faster, and near-UV sensitive compared with graphene/ not compatible with Si te