多孔硅甲苯悬浮体系电泳沉积的研究.pdf

27 Research on Electrophoretic Behavior of Porous Silicon Suspended in Toluene , (, 250014) Z ANG ua, LI uai-xiang ( Institute of Semiiconductors, Shandong Normal University, Jinan 250014, China) : 80100 ( ) , cm n PS , , (SEM) ( ) , X XPS : ; ; ; : T N020: A: 1001-4381 (2002) 04-0027-03 Abstract : The electrophoreticbehavior of porous silicon (PS) suspended in toluene has been discov- ered and studied . The toluene suspension was prepared by ultrasonication of anodically etched n- 80100 . porous silicon wafers with resistivities of cm It has been found that porous silicon par- ticles drift inversely in the external electric field and adhere to the surface of positive electrodes, , + - , - ( ) . such as Pt p Si indium tin oxide IT O glass etc There is a linear relationship between thepho- ( ) . toluminescence PL intensity and thePS concentration of the suspension The influence factors of PL intensity of the PS suspension such as deposition time and applied electric field intensity were, , . - examined in detail The morphology of thedeposited PS film and as prepared PS has been measured ( ) . - ( ) using scanning electron microscope SEM X ray photoelectron spectra XPS and Fourier Trans- form infrared (FTIR) have been used to analyze the deposited PS films. Key words: porous silicon (PS) ; suspended system in toluene; electrophoreticdeposition; photolu- minescence (PL)