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Electrical Instabilities and Low-Frequency Noise in
INVITED PAPER
978-1-4244-5598-0/10/$26.00 ?2010 IEEE IPFA 2010
Electrical Instabilities and Low-Frequency Noise in
InGaZnO Thin Film Transistors
Jong-Ho Lee, Hyuck-In Kwon*, Hyungcheol Shin, Byung-Gook Park, and Young June Park
*School of Electrical and Electronics Engineering, Chung-Ang University, Seoul
School of Electrical Engineering and Computer Science, Seoul National University, Seoul
Phone: (82) 2 880 7285. Fax: (82) 2 882 4658. Email: jhl@snu.ac.kr
Abstract-Our recent works concerning the electrical instability and
low frequency noise (LFN) behaviors of a-IGZO TFTs are
reviewed and significant results are reported. The experimental
and modeling study of bias-stress-induced threshold voltage
instabilities shows that the threshold voltage shift is mainly
attributed to the electron injection from the channel into
interface/dielectric traps in a-IGZO TFTs. By comparing the
results from devices with different dielectrics, we find that the
magnitude and time dependence of the threshold voltage shift are
strongly dependent on the gate dielectric material in a-IGZO TFTs.
The measured noise power spectral density shows that the LFN in
a-IGZO TFTs obeys the classical 1/f noise theory, i.e., fits well to a
1/f γ power law with γ ~ 1 in the low frequency range. From the
dependence of normalized noise power spectral density on the gate
voltage, the bulk mobility fluctuation is considered as a dominant
LFN mechanism of a-IGZO TFTs in the linear operation regime.
I. INTRODUCTION
Recently, amorphous indium-gallium-zinc oxide (a-IGZO)
thin film transistors (TFTs) have attracted much attention for
applications in mobile electronics, future displays, and other
consumer electronics due to their excellent electrical and optical
characteristics [1]-[3]. Although the potential advantages of
a-IGZO TFTs are m
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