Fabrication and contact resistivity of W–Si3N4TiB2–Si3N4p–SiGe thermoelectric joints.pdfVIP

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Fabrication and contact resistivity of W–Si3N4TiB2–Si3N4p–SiGe thermoelectric joints.pdf

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Fabrication and contact resistivity of W–Si3N4TiB2–Si3N4p–SiGe thermoelectric joints.pdf

Ceramics International 42 (2016) 8044–8050 Contents lists available at ScienceDirect Ceramics International journal homepage: /locate/ceramint Fabrication and contact resistivity of W–Si3N4/TiB2–Si3N4/p–SiGe thermoelectric joints X.Y. Yang a,c, J.H. Wu b, M. Gu b, X.G. Xia b, L.D. Chen a,n a State Key Laboratory of High Performance Ceramics and Super?ne Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China b CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China c University of Chinese Academy of Sciences, Beijing 100049, China article info Article history: Received 5 January 2016 Received in revised form 31 January 2016 Accepted 1 February 2016 Available online 5 February 2016 Keywords: SiGe Joint Interfacial stability Contact resistivity abstract The design and fabrication of silicon germanium (SiGe) thermoelectric elements, typically including the selection of electrode and intermediate materials, the process of joining electrode and intermediate layer onto thermoelectric materials, are the major challenge for SiGe thermoelectric device technology. In this study, W–Si3N4 and TiB2–Si3N4 composites are designed as the electrode and intermediate layer, respectively, and the W–i3N4/TiB2–Si3N4/p–Si80Ge20B0.6 joints are fabricated by a one-step spark plasma sintering process. The in?uences of the composition of TiB2–Si3N4 intermediate layer on the interfacial structure, contact resistivity and interfacial thermal stability are investigated. The interfacial thermal stability is improved with increasing Si3N4 content in TiB2–Si3N4 intermediate layer due to the reduced mismatch of coef?cients of thermal expansion between the intermediate layer and SiGe. On the other hand, the contact resistivity increases with the rising of Si3N4 content due to the weakened TiB2/SiGe ohmic contact, which degrades the device ef?ciency. As the balanced point, the