Effect of rapid thermal annealing on the Mo back contact properties for Cu2ZnSnSe4 solar cells.pdfVIP

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Effect of rapid thermal annealing on the Mo back contact properties for Cu2ZnSnSe4 solar cells.pdf

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Effect of rapid thermal annealing on the Mo back contact properties for Cu2ZnSnSe4 solar cells.pdf

Journal of Alloys and Compounds 675 (2016) 158e162 Contents lists available at ScienceDirect Journal of Alloys and Compounds journal homepage: /locate/jalcom Effect of rapid thermal annealing on the Mo back contact properties for Cu2ZnSnSe4 solar cells Marcel Placidi a, *, Moises Espindola-Rodriguez a, Simon Lopez-Marino a, Yudania Sanchez a, Sergio Giraldo a, Laura Acebo a, Markus Neuschitzer a, Xavier Alcobe b, Alejandro Perez-Rodríguez a, c, Edgardo Saucedo a a Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adria del Besos, Barcelona, Spain b Centres Cientí?cs i Tecnologics (CCiTUB), Lluis Sole i Sabarís 1, 08028 Barcelona, Spain c IN2UB, Departament d’Electronica, Universitat de Barcelona, Martí i Franques 1, 08028 Barcelona, Spain article info Article history: Received 14 December 2015 Received in revised form 29 February 2016 Accepted 8 March 2016 Available online 15 March 2016 Keywords: Cu2ZnSnS4 (CZTS) Kesterite Rapid thermal process (RTP) annealing Back contact Thin ?lm abstract The effect of a rapid thermal process (RTP) on the molybdenum (Mo) back contact for Cu2ZnSnSe4 (CZTSe) solar cells is here investigated. It is shown that the annealing of the Mo layer during 5 min at 550 C, not only improves the crystalline quality of the back contact (avoiding the absorber decomposition at this region because Mo becomes more resistant to the selenization), but also helps achieving higher crystalline quality of the absorber with bigger grains, reducing the current leakage through the heterojunction. We demonstrate that this is related to the relaxation of the compressive stress of the CZTSe absorber, when synthesized on the RTP annealed substrates. CZTSe solar cells prepared on annealed Mo ?lms exhibited higher short circuit current densities and higher open circuit voltages, resulting in 10% and 33% higher ?ll factors and ef?ciencies. ? 2016 Elsevier B.V. All rights reserved. 1. Introduction Cu2ZnSnSe4 (CZTS