Development of ZnTe as a back contact material for thin film cadmium telluride solar cells.pdfVIP

Development of ZnTe as a back contact material for thin film cadmium telluride solar cells.pdf

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Development of ZnTe as a back contact material for thin film cadmium telluride solar cells.pdf

Vacuum xxx (2017) 1e5 Contents lists available at ScienceDirect Vacuum journal homepage: /locate/vacuum Development of ZnTe as a back contact material for thin ?lm cadmium telluride solar cells S. Ulicna a, *, P.J.M. Isherwood a, P.M. Kaminski a, J.M. Walls a, J. Li b, C.A. Wolden b a Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire, LE11 3TU UK b Colorado School of Mines, Golden, CO 80401, USA article info Article history: Received 21 July 2016 Received in revised form 28 November 2016 Accepted 1 January 2017 Available online xxx Keywords: CdTe solar cells Thin ?lm Back contact Cu-doped ZnTe Pulsed DC magnetron sputtering RTP abstract Cadmium telluride (CdTe) is high-ef?ciency commercialised thin ?lm photovoltaic technology. However, developing a stable low-resistivity back contact to the CdTe solar cells is still an issue. High work function and low level of doping of this material dont allow to create an ohmic contact with metals directly. Copper is commonly used to lower the back contact barrier in CdTe solar cells, but an excessive amount of copper diffusing through the cell is harmful for the device performance and stability. In this work a copper-doped ZnTe (ZnTe:Cu) buffer layer was incorporated in between CdTe and gold metal contact by high-rate pulsed DC magnetron sputtering. The back contact was then activated by rapid thermal pro- cessing (RTP) resulting in spectacular improvement in key device performance indicators, open circuit voltage (VOC) and ?ll factor (FF). ? 2017 Published by Elsevier Ltd. 1. Introduction Cadmium telluride is one of the leading and most promising materials for thin ?lm solar cells. It has an optical band-gap of around 1.45e1.5 eV which is close to the optimum for photoconversion, and has a large optical absorption coef?cient ( 10à4/ cm) [1,2]. It is a direct band-gap semiconductor, with the result that only very thin layers are required to fully absorb photons [1]. CdTe phot

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