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Back Junction n-type Silicon Heterojunction Solar Cells with V2O5 Hole-selective Contact.pdf

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Back Junction n-type Silicon Heterojunction Solar Cells with V2O5 Hole-selective Contact.pdf

Available online at ScienceDirect Energy Procedia 92 (2016) 633 – 637 6th International Conference on Silicon Photovoltaics, SiliconPV 2016 Back junction n-type silicon heterojunction solar cells with V2O5 hole-selective contact Luis G. Gerlinga,b, * , Gerard Masmitjaa, Cristobal Voza, Pablo Ortegaa, Joaquim Puigdollersa,b, Ramón Alcubillaa,b a Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, 08034, Barcelona, Spain b Centre for Research in Nano-engineering, Pascual i Vila 15, 08028, Barcelona, Spain Abstract In this work, a back junction solar cell design is explored for n-type crystalline silicon by using thermally evaporated V2O5 as a rear hole contact and n+ amorphous silicon (a-Si:H) as a front electron contact. Photoconductance measurements revealed an implicit open-circuit voltage (i-VOC) of 670 mV for the solar cell precursor (before metallization), achieved by maximizing the work function of V2O5 with a thin nickel capping layer. The VOC value of the finished device was lower than projected at 617 mV, most likely due to poor passivation of the active area perimeter. Nonetheless, an efficiency of 14.2% was achieved (in polished substrates), proving the potential of such a novel structure. ?ThheeAAutuhtohros.rsP.uPbulibshliesdhbedy EbylseEvliseervLietdr.LTthdi.s is an open access article under the CC BY-NC-ND license (Phettepr:/r/ecrveiaetwivebcyomthme osncsie.onrtgi/fliiccecnosnefse/breyn-ncce-ncdo/m4.m0/)it.tee of SiliconPV 2016 under responsibility of PSE AG. Peer review by the scientific conference committee of SiliconPV 2016 under responsibility of PSE AG. Keywords: Silicon heterojunction solar cell; Hole-selective contact; Transition metal oxide; Vanadium pentoxide 1. Introduction During the past decades, crystalline silicon (c-Si) has become the dominant photovoltaic technology due to its well-known device physics and high throughput processing. However, further lowering of its production cost depend