纳米工艺集成电路可寻址测试芯片的设计方法的研究.pdfVIP

Author’s7HeProfessorXiaoboExtemalS一ShenZheiZheiZheiLenianHaibinProfessorProfessorProfessor 二 T II wellwithABSTRACTABSTRACTmakemoremeasurementmassmethodmodulesmodulemethodmakemanualnano—erabewellbeallbecomehothavehashasaaasaaaasaaaresearchnewnode．Innode．neededorononrandomresearchCanCanOurcanandaddressableaddressableallofofofofofaddressableofaccommodate．Underasareaarecontentcontentsour65nm0nmtoextracttesttesttesttesttesttesttesttesttototototesttotototofaultanandandarea．Weandandandandandanotherandandfour-terminalfailureforthethatthisthethethetheIIIcustomizedthanthethethethethethethethethethethethethethatamounttransferredsuchsolutionsizeconnectedschemeschemeschemelotisisis11beenbeenfaultworkCMOSstructuresstructuresstructuresmainthesismakesallfocusedtraditionalareaCMOSlocationtransferredtheforverifiedverifiedoflocationinof ABSTRACTMOSMOSFETmmeasurementmetal．Thishasaaareaanode．variationsaccurateCMOS45nmandaddressableofstatisticaltoforand28nmcharacteristics．ThetwoschemeschemebeencharacterizationlevelsCMOSverifiedofin in ABSTRACT…………………………………………………………………………………………………………．IIIV1 VT2．4．1 VII VIIIGTITRS TX X V2doubleXIGT130nm on ’Y×x一一-tk 6 65nm130hmi7745nm ”“ ofl UlUU-UILDIUIUIthicknessLDthIckness ff forInstituteofStandardsand recombination14 16 test warersCMOS@MOSFET5 CMOS19 20 21 widthwidthwidthwidthwithAAandAAisallowedNMOSNMOSmustbentbePMOSPMOSnotGTwidthGTGTGTGTGTsGTGTenclosedGTisareaareaarebetweenbetweenbetweenononononon8SABallowed6ofGToutsidetofieldforbiddenand@Minimum@Minimum@Mininlunl@Minimum@No@Intrinsic@SN3．3V3．3Vforforforforformtransistortransistortransistortransistor7twoextensiontheextension@Minimum@Minimum@Minimum@Mimmum@Minimum@Minimum@M