在氢化非晶硅和单晶硅太阳能电池的界面结构上外延生长的影响.pdfVIP

APPLIED PHYSICS LETTERS 90, 013503 2007 Impact of epitaxial growth at the heterointerface of a-Si:H/ c-Si solar cells Hiroyuki Fujiwaraa and Michio Kondo National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan Received 25 September 2006; accepted 28 November 2006; published online 2 January 2007 The authors have demonstrated that interface structures of heterojunction solar cells consisting of hydrogenated amorphous silicon a-Si:H and crystalline silicon c-Si have quite large impact on the solar cell performance. In particular, unintentional epitaxial growth was found to occur during an intended a-Si:H i-layer growth on c-Si in plasma-enhanced chemical vapor deposition PECVD. By the formation of the epitaxial layer at the interface, the solar cell efficiency decreases significantly. Their result shows that the epitaxial layer is formed rather easily in PECVD, even without the presence of H2 gas, and may have affected many previous studies on a-Si:H/ c-Si solar cells seriously. © 2007 American Institute of Physics. DOI: 10.1063/1.2426900 In heterojunction solar cells composed of hydrogenated the a-Si:H p -i layers were found to be i/p =40/30 Å, and amorphous silicon a-Si:H and crystalline silicon c-Si, the these thicknesses were also employed in this study. To con- a-Si:H/ c-Si heterointerface is of significant importance, trol the thicknesses of the p -i layers accurately, real-time since the heterointerface characteristics directly affect the thickness control was pe