薄膜材料研究中的XRD技术.pdfVIP

Microscope, Measurement, Microfabrication Equipment 薄膜材料研究中的XRD 技术 , , , , , , , , , , ( , 210093) : , X (XRD) XRD : XRD ; ; Mosaic , XRD Mosaic , XRD , XRD : X ; ; ; ; ; Mosaic : O72 ; O472 : A : 167 1- 4776 (2009) 02- 010 8- 07 XRD Techn ique in t he Research of Thin Film M aterials Zhou Yuanjun, Xie Zili, Zhang Rong, Liu Bin, Li Yi, Zhang Zeng, Fu De i, Xiu Xiangqian, Han Ping, Gu Shulin, Zheng Youdou (Jiangsu Provincial Key Laboratory of Advanced Photonicand Electronic Materials, Depart ent of Physics, Nanjing University, Nanj ing 2 10093, China) Abstr act : Lattice parameter, stress, strain and dislocation densit are critical parameters in the resear ch of thin film mater ials, and X2ra diffr action ( XRD) technique provides a convenient and nondestructive means to measure these ph sical quantities. The application of XRD tech2 nique in thin films resear ch is reviewed from the aspects of lattice constant, str ess, str ain and dislocation densit , respectivel . The lattice constant measure of semiconductor thin films b XRD is introduced. The str ian and str ess in semiconductor heterostructur al la ers are discussed combining with the measure of lattice parameter. The dislocation densit anal zed b Mosaic model is emphaticall introduced, including comparison of several methods and anal sis of advan2 tage and disadvantage. The future development of XRD technique in thin film research is pros2 pected accor ding to XRD theor and latest progress in these fields. Key words: XRD; lattice par ameter; stress; strain; dislocation densit ; Mosaic model EEACC: 252