CSiC复合材料.pdfVIP

21 2 Vol.21 No.2 2 0 0 7 4 CHINESE JOURNAL OF MATERIALS RESEARCH April 2 0 0 7 C/C–SiC ∗ ( 110016) C/C–SiC , SiC , . 1600 2 h, 2∼4 µm. Æ, SiC , ; SiC SiC . SiC , . , , , C/C–SiC , TB332 1005-3093(2007)02-0135-05 Preparation of C/C–SiC composites by molten silicon infiltration method WANG Daoling TANG Sufang DENG Jingyi∗∗ LIU Wenchuan (Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016) * Supported by National Natural Science Foundation of China No Manuscript received June 19, 2006; in revised form October 23, 2006. ** To whom correspondence should be addressed, Tel:(024 E–mail: jydeng@imr.ac.cn ABSTRACT C/C–SiC composites were prepared by MSI process, and the microstructure of the materials was investigated in this paper. The results show that a majority of the reaction–formed silicon carbide distributes in inter–layer pores and inter–bundle pores, while a minority in the inter–fiber pores. After the 2 h MSI process at 1600 , the reaction–formed silicon carbide layer is 2∼4 μm in thickness. Due to the good wetting characteristics of the liquid silicon upon the pyrolytic carbon, there are continuous SiC layers formed on the surface of the carbon matrix; however some SiC grains with faceted surfaces are also found. The forming mechanisms of the continuous SiC layers and faceted SiC grains were discussed. The oxidation experiment results show that the oxidation resistance of the material is significantly improved owing to additive of SiC. KEY WORDS composite, molten silicon, liquid infiltration, C/C–SiC composit