纳米压印的技术方法研究.doc

摘 要 半导体加工几十年里一直采用光学光刻技术实现图形转移,最先进的浸润式光学光刻在45 nm节点已经形成产能,然而,由于光学光刻技术固有的限制,已难以满足半导体产业继续沿着摩尔定律快速发展。在下一代图形转移技术中,电子束直写、X射线曝光和纳米压印技术占有重要地位。其中纳米压印技术具有产量高、成本低和工艺简单的优点,是纳米尺寸电子器件的重要制作技术。介绍了传统纳米压印技术以及纳米压印技术的新进展,如热塑纳米压印技术、紫外固化纳米压印技术、微接触纳米压印技术等。 关键词:纳米压印；气压辅助压印；激光辅助压印；滚轴式压印 Abtract Transfer of graphics is achived by oplical lithography for several decades in semiconductorprocess. The prodution capacity of 45 nm node has been formed. But now semiconductor industry is difficult to be developed according toMoore law because of the inherent limitations of oplical lithograhy. Nowelectron - beam directwriting, X - ray exposure and nanoimprint technology are the main technologies fornext generation graphics transfer technology. Nanoimprint technology has the advantages of high yield, lowcost and simple process. Introduce the traditional nanoimprint technology and its development, includinghot embossing lithography technology, ultraviloet nanoimprint,micro - contact nanoimprint. Key words:Nanoimprint lithography； Pressure-assisted nanoimprint； Laser-assisted nanoimprint；Roller-type nanoimprint 目 录 TOC \o 1-3 \h \z \u HYPERLINK \l _Toc324412982 第1章 绪论 1 HYPERLINK \l _Toc324412983 第2章 纳米压印的技术方法 PAGEREF _Toc324412983 \h 5 HYPERLINK \l _Toc324412984 2.1 热塑纳米压印技术 PAGEREF _Toc324412984 \h 5 HYPERLINK \l _Toc324412985 2.2 紫外固化纳米压印技术 PAGEREF _Toc324412985 \h 6 HYPERLINK \l _Toc324412986 2.3 微接触压印技术 PAGEREF _Toc324412986 \h 8 HYPERLINK \l _Toc324412987 2.4 纳米压印技术的新发展 PAGEREF _Toc324412987 \h 9 HYPERLINK \l _Toc324412988 2.4.1金属薄膜直接压印技术 PAGEREF _Toc324412988 \h 9 HYPERLINK \l _Toc324412989 2.4.2激光辅助压印技术 PAGEREF _Toc324412989 \h 10 HYPERLINK \l _Toc324412990 2.4.3滚轴式纳米压印技术 PAGEREF _Toc324412990 \h 11 HYPERLINK \l _Toc324412991 2.4.4“缩印”工艺 PAGEREF _Toc324412991 \h 12 HYPERLINK \l _Toc324412992 第3章 影响纳米压印图形精度的因素 PAGEREF _Toc324412992 \h 14 HYPERLINK \l _Toc324412993 3.1 温度 PAGEREF _Toc324412993 \h 14 HYPERLINK \l _Toc324412994 3.2 压印时间 PAGEREF _Toc324412994 \h 14 HYPER