多发光区大功率激光器热阻构成的研究.docVIP

 The analysis for thermal resistance of multi-emitter laser diodes# 5 10 15 20 25 30 35 40 Li Jingwan, Feng Shiwei, Zhang Guangchen, Xiong Cong, Qiao Yanbin, Guo Chunsheng** (Institute of Electronic Information Control Engineering,Beijing University of Technology, Beijing 100124) Abstract: The transient temperature characteristics of high power laser diode (LD) with multiple emitters were presented and discussed in this paper. The transient temperature response curves were measured by electrical temperature sensitive parameter method. Structure function method was performed to evaluate the thermal resistance constitution for multiple emitters LD. The thermal resistance network model was adopted to characterize the thermal behavior of LDs with one, two and four emitters respectively. The experiment result shows that chip level thermal resistance of multiple emitters LD decreases proportionally to the number of emitters, while the package level thermal resistance remains unchangeable. The study provides an important rule in the thermal design of multiple emitters LD. Key words: Laser diode; thermal resistance; structure function 0 Introduction Nowadays, laser diodes (LDs) are extensively applied in various fields such as solid state laser pumping, materials processing, optical communications, printing machines and so on[1]-[3]. As the power dissipation and integration density keep increasing, the induced high operation junction temperature has become a critical issue which affects the device parameter and long-term reliability. It is well established that the operating temperature of semiconductor devices affects not only the efficiency but also the reliability of the devices [4], [5]. Therefore, thermal management is getting more and more important for stable operation and long lifetime of LDs. In order to fulfill the large power requirements, multiple emitters LD is used more and more widely due to the high electro-optical efficiencies and output powers. In l