广东2025自考[大功率半导体科学]英语二易错题专练.docxVIP

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广东2025自考[大功率半导体科学]英语（二）易错题专练

一、选择题（每题1分，共20题）

说明：每题只有一个最佳答案。

1.Thedevelopmentofhigh-powersemiconductortechnologyhassignificantlybenefitedwhichregionsindustrialupgrade?

A.Europe

B.NorthAmerica

C.EastAsia

D.SouthAmerica

2.Whatistheprimaryadvantageofsiliconcarbide(SiC)oversilicon(Si)inhigh-powerapplications?

A.Lowercost

B.Higherthermalconductivity

C.Simplermanufacturingprocess

D.Bettercompatibilitywithexistinginfrastructure

3.WhichofthefollowingisNOTatypicalapplicationofGaN(galliumnitride)inpowerelectronics?

A.Electricvehicleinverters

B.Mobilephonechargers

C.Radiofrequencyamplifiers

D.LEDlighting

4.Thetermreverserecoveryinsemiconductordevicesrefersto:

A.Thetimeittakesforadiodetoturnon

B.Theenergylossduringturn-off

C.Theefficiencyofatransformer

D.Thecurrentsurgeinacircuit

5.Whichmaterialisconsideredthemostpromisingfornext-generationhigh-powertransistors?

A.GaAs(galliumarsenide)

B.SiC(siliconcarbide)

C.Si(silicon)

D.Ge(germanium)

6.Whatisthemainchallengeinimplementingwide-bandgapsemiconductorsinindustrialapplications?

A.Highcost

B.Lowswitchingfrequency

C.Poorthermalmanagement

D.Limitedscalability

7.ThedriftregioninapowerMOSFETisprimarilyresponsiblefor:

A.Switchingspeed

B.Highcurrentcapacity

C.Lowpowerloss

D.Thermalisolation

8.Whichofthefollowingisakeyfactorinreducingswitchinglossesinhigh-powersemiconductors?

A.Increasingthebreakdownvoltage

B.Decreasingthegateresistance

C.Usingalowerfrequency

D.Increasingtheforwardcurrent

9.TheparasiticthyristoreffectinMOSFETsiscausedby:

A.Highgatecapacitance

B.Unintentionalturn-onduetochargesharing

C.Lowdrain-sourceresistance

D.Highthermalconductivity

10.WhichofthefollowingisamajoradvantageofSiCpowermodulesinelectricvehicles?

A.Lowerweight

B.Higherefficiencyatlowtemp