HYG065ND03LR1S+datasheet+V2.0深圳恒锐丰科技.pdf

HYG065ND03LR1SMicroelectronics

DualN-ChannelEnhancementModeMOSFET

FeaturePinDescription

30V/14A

RDS(ON)=7.1mΩ(typ.)@VGS=10V

RDS(ON)=10.2mΩ(typ.)@VGS=4.5V

100%AvalancheTested

ReliableandRugged

HalogenFreeandGreenDevicesAvailable

(RoHSCompliant)SOP8L

Applications

Switchingapplication

Li-batteryprotection

DC-DC

DualN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

SS:SOP8L

HYG065ND03

XYMXXXXXXDateCode

XYMXXXXXX

Note:HUAYIhalogenfreeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIhalogenfreeproductsmeetorexceedthehalogenfree

require-mentsofIPC/JEDECJ-STD-020forMSLclassificationathalogenfreepeakreflowtemperature.HUAYI

defines“Green”tomeanhalogenfree(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmby

weightinhomogeneousmaterialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

/V2.0

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HYG065ND03LR1S