HYG026N03LS1C2+datasheet+V2.1深圳恒锐丰科技.pdf

HYG026N03LS1C2Microelectronics

N-ChannelEnhancementModeMOSFET

FeaturePinDescription

30V/100A

RDS(ON)=2.8mΩ(typ.)@VGS=10V

RDS(ON)=4.5mΩ(typ.)@VGS=4.5V

100%AvalancheTested

100%DVDS

ReliableandRugged

HalogenFreeandGreenDevicesAvailable

Pin1PDFN8L(5x6)

(RoHSCompliant)

Applications

Switchingapplication

Li-batteryprotection

DC-DC

Motorcontrol

SingleN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

C2C2:PDFN8L(5x6)

HYG026N03

XYMXXXXXXDateCode

XYMXXXXXX

Note:HUAYIhalogenfreeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIhalogenfreeproductsmeetorexceedthehalogenfree

require-mentsofIPC/JEDECJ-STD-020forMSLclassificationathalogenfreepeakreflowtemperature.HUAYI

defines“Green”tomeanhalogenfree(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmby

weightinhomogeneousmaterialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

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