新型传感器-教学课件5.pptVIP

新型传感技术及应用 郭占社 Bulk technology Wet etching (Chemical reaction) r z ω Temperature:80 In order to obtain excellent quality of etching rate KOH:H2O:(CH3)2CHOH=23.4%:63.3%:13.3% 体硅工艺 KOH+H2O→K++2(OH)-+H+ Si+2(OH)-+4H2O Si(OH)6Si(OH)6+2H2 (CH3)2CHOH Si(OH)-26 +6(CH3)2CHOH→[Si(OC3H7)6]-2+H2O Coordination reaction General Coordination material [Si(OC3H7)6]-2 Soluable coordination 体硅工艺 Bulk technology Wet etching (Chemical reaction) Middle thickness: SiO2 (Quality) High thickness:Si3N4 Photoresist permitted (because of high temperature) 体硅工艺 100 100,111, most popularly used plane 110, most useful plane, chip cutting 100:111=1:400 体硅工艺 Bulk technology 体硅工艺 Bulk technology Wet etching (Chemical reaction or physical ) CMP (Chemical Mechanical Polish) SiO2 and HF liquid KOH(10) and HF METAL IS ALAO OK 体硅工艺 Bulk technology Dry etching:Plasma etching, RIE (Reaction Ion Etching) Definition: Etching with the gas’ plasma or splashing technology Gas’ ionization under the electronic field; 2. Moving on the surface of the chip; 3. Chemical reaction with the surface and the waste gas is pulled out of the bulk. 体硅工艺 表面硅工艺 表面牺牲层工艺的发展 ? 九十年代初ADI的气囊加速 度计实现产业化 ? 九十年代末Sandia实验室5层多晶硅技术代表最高水平 ? 八十年代初发明静电马达，引起轰动 表面硅工艺 牺牲层技术 Si衬底 b Si衬底 牺牲层 Si衬底 牺牲层 结构层 Si衬底 牺牲层 结构层 Si衬底 可动结构 SiO2 Si3N4 Poly-Si Resist 体硅工艺 表面硅工艺 表面硅工艺 LIGA工艺 LIGA—Lithographie Galvanoformung Abformung X射线曝光、微电铸、微铸塑 起源：1986年，德国 特点：高深宽比（1微米宽，1000微米深） 需要功率强大的回旋加速器产生的软X射线作光源 掩膜版要求高、成本高 难于与IC集成制作 LIGA A：曝光 B：显影 C：电铸 D：去胶 E：铸塑 衬底 掩膜 胶 金属 铸塑 材料 LIGA工艺 10-1000micro meter LIGA工艺 Quasi-LIGA Method FeCl3 准LIGA工艺 剥离技术 键合技术 Definition: By using the connecting technology, we can overlap the planar structure together, then the three dimensional structure is built. Material: glass and silicon, glass and metal, silicon and silicon, metal and metal. Temperature caused expended coefficient must the same, Otherwise, it is hard to combine them. Bondin