SEMI M55-0308 国外国际标准.pdf

SEMI M55-0308 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS This standard was technically approved by the global Compound Semiconductor Materials Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 20, 2007. It was available at in February 2008 and on CD-ROM in March 2008. Originally published March 2003. 1 Purpose 1.1 These specifications cover substrate requirements for monocrystalline high-purity silicon carbide wafers of crystallographic polytype 6H and 4H used in semiconductor and electronic device manufacturing. 2 Scope 2.1 A complete purchase specification may require that additional physical, electrical, and bulk properties be defined. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented. 2.2 These specifications are directed specifically to silicon carbide wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find these specifications helpful in defining their requirements. 2.3 The material is Single Crystal Silicon Carbide (SiC) existing in many crystallographically different polytypes. For the most common polytypes the following properties in Table 1 are listed for use as guidelines: 1 Table 1 Common Properties Polytype 4H 6H Lattice Parameter a 3.076 Å 3.073 Å c 10.053 Å 15.117 Å Stacking Sequence A