脉冲激光沉积法制备高质量zno薄膜及其缓冲层的研究微电子学与固体电子学专业论文.docxVIP

优秀毕业论文 精品参考文献资料 脉冲激光沉积法制备高质量ZnO 脉冲激光沉积法制备高质量ZnO薄膜及其缓冲层的研究 摘 要 氧化锌(ZnO)是一种宽带隙(室温下3．3eV)II-VI族化合物半导体，激子结合能为 60meV，具有六方纤锌矿结构。ZnO薄墨菊有良好的透明导电性、压电性、光电性、气 敏性和压敏性，且易于与多种半导体材料实现集成化。由于这些优异的性质，使其具 有广泛的用途和许多潜在用途，如声表面波器件、平面光波导、透明电极、紫外光探 测器、压电器件、压敏器件、紫外发光器件和气敏传感器等。近年来，对其研究和开 发在国内外科学界及工业部门引起了极大的关注和兴趣。 本文通过采用脉冲激光沉积法在单晶Si(100)衬底上生长了沿c轴高度取向 的高质量ZnO薄膜。衬底温度、环境氧压、脉冲频率是影响薄膜质量非常重要的 三个因素。通过AFM、XRD和PL谱测试研究这三个因素对所制备薄膜的表面形貌、 结晶性能和光学性质的影响。进行了ZnO薄膜可控生长方面的研究，对ZnO薄膜 的制备条件进行了优化。 论文进行了ZnO薄膜缓冲层的研究。ZnO与Si衬底失配度较大，所生成ZnO薄膜 的质量受到影响。本文引入了缓冲层并就生长过程中缓冲层的引入对薄膜质量的影响 作了分析。通过研究发现，引入缓冲层后，ZnO薄膜表面形貌明显改善，XRD半 高宽减小，表明结晶质量提高。论文对缓冲层在薄膜生长中的作用进行了探讨。 关键词：氧化锌：脉冲激光沉积；原子力显微镜；XRD；光致发光；缓冲层 4 Study Study of ZnO thin film and its buffer layer grown by pulsed laser deposition Abstract ZnO is a II．VI compound semiconductor with a wide direct band gap of 3．3eV at room temperature，exciton binding energy of 60meV．and a hexagonal wurtzite structure． Due to their excellent playsical and chemical properties，ZnO films have many realized and potential applications such as surface acoustic wave devices，planar optical waveguides． transparent electrodes，ultraviolet photodetectors，piezoelectric devices，varistors，gas sensors，UV／violet／blue．LEDs(1ight emitting diodes)and．LDs(1aser diodes)，etc．And they Can be integrated with some materials readily．In recent years．the researches and developments of ZnO films have attracted great attention and interest from researchers and the industry． In mis thesis．a PLD system Was used for preparation of high．quality ZnO thin films on si(1 00)substrates．The substrate temperature，the single pulse energy and the repetition rate are three important factors that affect the quality of tllin films．The micmstructures，crystaUinity and the optical properities of ZnO films are respectively investigated by atomic force microscopy(AFMl。X．ray diffraction(XRD) and photoluminescence(PL)spectra．W．e have studied the controlled growth of ZnO films and got the optimized parameter． The ZnO thin films with a buffer layer have b