高压二极管的反向恢复时间测试系统电气工程专业论文.docxVIP

摘要半导体器件体积小、寿命长，如今得到了非常广泛的应用，它已成为现代电 摘要 半导体器件体积小、寿命长，如今得到了非常广泛的应用，它已成为现代电 子技术的重要组成部分。利用PN结对正反向电流表现出的通断特性，半导体二 极管常在脉冲电路中作为开关使用。但二极管PN结中存在电容效应，若要正确 地用做脉冲开关，就必须了解二极管的反向恢复时间等重要参数。本文旨在设计 一种测量范围更广、更实用、精度更高、成本也较低的高压二极管反向恢复时间 测试系统。 首先，对二极管的反向恢复过程及相关应用进行了研究，指出二极管反向恢 复时间测试的必要性；比较了以往文献提到过的几种测试方案，分析了各自的优 缺点和本系统设计方案的实现目标，提出解决方案和测试注意事项，并将整个测 试系统分为上位机和测试头两个部分来设计和说明。 其次，将整个测试头硬件系统分为k测试波形获取电路、‘k脉冲截取转 换电路、信号上传和模块内部电源三个部分来描述它们的设计情况，详细介绍了 每个模块的电路及功能，讨论了某些难点电路的设计，以及重要芯片和器件的选 择。 第三，将上位机模块分成硬件和软件两部分来介绍。硬件部分介绍时，论文 讨论了各部分电路的实现原理和具体设计情况，并给出了硬件系统框图和某些子 电路原理图；软件部分介绍时，论文给出了软件程序的流程图以及某些重要的子 程序源代码，分模块介绍了整个软件的实现过程。 最后，论文对设计方案进行了误差分析，并总结了整个系统实现的功能以及 创新点。根据仪器在工厂的运行情况及示波器结果显示的比较，证明方案可行。 关键词：高压二极管，反向恢复时间，差分放大，测试系统，Wave6000 11 AbstractSemiconductor Abstract Semiconductor device is widely applied because of its small size and long service life．It has been all important component of modem electronics technique． Due to the oⅣoff characteristic of P-N junction to the forward and reverse current, semiconductor diode often uses嬲switch in pulse circuit．However,as the． capacitance effect of the diode P-N junction,diode parameters such as reverse-recovery time must be studied before the diode can be used correctly as pulse switch．The paper alms to design a reverse recovery time of high—pressure diode testing system which has wider me弱urement range，more practical value，higher precision and lower cost． Firstly,the paper studed the reverse recovery process of the diode and its relevant application,and then indicated the importance of testing diode reverse recovery time． It also compared several testing schemes mentioned in the previous literatures and analyses their weaknesses and strengths．Then the achieving goal of the system design scheme and testing precautions were proposed．Finally,all testing system Was divided into PC andtest head． Secondly,the test head Was designed by three parts：the intercepting of TRR testing waveform,the intercepting and conversion of TRR pulse，and the uploading of signal and the desig