低损耗高功率半导体激光器研究-物理电子学专业论文.docxVIP

摘 要 针对 980nm 波段半导体激光器的外延结构，分析了影响高功率半导体激光器最大 输出功率和转换效率进一步提高的主要原因，即内损耗机制，根据对内损耗机制的研 究，找到了降低器件内损耗的方法，并运用 Lastip 软件对 980nm 高功率半导体激光器 的波导结构进行了优化设计，通过优化波导中的 Al 组分及在波导中加入低折射率光陷 阱层，降低了器件的内损耗，提高了器件的输出功率和转换效率，并得到较高的光学 灾变损伤阈值。 另外，研究了掺杂对 980nm 宽波导结构内损耗产生的影响，采用了三种掺杂方式 对宽波导结构的上下波导层进行掺杂，分别为非掺、n-n 掺杂和 n-p 掺杂，最后发现 n-n 掺杂更有利于减小半导体激光器的内损耗，提高转换效率和输出功率。 关键词：低损耗 高功率半导体激光器 光陷阱结构 n-n 掺杂 ABSTRACT Aimed at 980 nm band semiconductor laser extensional structure, analyzed the influence high power semiconductor laser maximum output power and conversion efficiency is further improved, the main reasons for the loss mechanism, according to the research of the internal loss mechanism, find the method of reduce losses in the device and use Lastip software for 980 nm waveguide structure of high power semiconductor laser is optimized design, through the optimization Al of waveguide component and add low refractive index optical trap in waveguide layer, reduced the loss of the device, improves the output power and conversion efficiency of the device, and to get higher optical disaster damage threshold. In addition, the doping on the impact of 980 nm width loss within the waveguide structure, adopted three doping ways of wide waveguide structure fluctuation layer for doped waveguide, respectively, the mixing, n - n doping and n - p, finally found that n - n doping is more advantageous to reduce the loss of semiconductor laser, improve the conversion efficiency and power output. Key words：Low loss High power semiconductor laser Trap structure n - n doping 目 录 HYPERLINK \l _bookmark0 摘 要 HYPERLINK \l _bookmark1 ABSTRACT HYPERLINK \l _bookmark2 第一章 绪 论 1 HYPERLINK \l _bookmark3 1.1 半导体激光器 1 HYPERLINK \l _bookmark4 1.2 半导体激光器的发展历史 1 HYPERLINK \l _bookmark5 1.3 国内外高功率半导体激光器的研究现状 3 HYPERLINK \l _bookmark6 1.4 国内外低损耗半导体激光器的研究进展 4 HYPERLINK \l _bookmark7 1.5 低损耗高功率半导体激光器的研究意义 4 HYPERLINK \l _bookmark8 1.6 Lastip 软件介绍 5 HYPERLINK \l _bookmark9 1.7 论文主要研究内容 6 HYPERLINK \l _bookmark10 第二章 低损耗高功率半