电浆处理或快速热回火於MOHOS电容器储存层之研究-逢甲大学.PDFVIP

報告題名： 電漿處理或快速熱回火於 MOHOS電容器儲存層之研究 作者：莊仲豪 系級：電子四乙 學號：D9572975 開課老師：李景松 課程名稱：化合物半導體元件 開課系所：電子工程學系 開課學年： 98 學年度第一 學期 電漿處理以及快速熱回火於 MOHOS電容器儲存層之研究 Abstract In the TaN / SiO / HfO / SiO / Si structure, the HfO charge storage 2 2 2 2 layer was treated by H2 or NH3 plasma treatment for three minutes. The power of the plasma treatment is 200 watt and the gas flow is 200 sccm. The results indicate the direction of C-V hysteresis curve is counterclock- wise and the voltage is 4.5V and 4V respectively. The defects resulting from hydrogen atoms can induce the fixed positive charges and result in charging or discharging on the HfO film. After N plasma treatment, the 2 2 hysteresis phenomenon of the C-V hysteresis curve disappeared. The reason is that the defects in the HfO2 film could be passivated by nitrogen atoms. In the memory window, the electrons stored on the film could be discharged easily after H2 plasma treatment owing to the shallow electron traps. But, the electrons do not discharge easily after NH3 plasma treat- ment. The reason is the shallow electron traps could be passivated by nitrogen atoms. Experimental results indicate the memory window (2V ~ 3 V) could be obtained after H or NH plasma treatment after discharging 2 3 for 1000 sec. Keywords: HfO2, Plasma treatment, Anneal, Hysteresis loop, Charge retention, Memory Window 1 逢甲大學學生報告 ePaper(2009 年) 電漿處理以及快速熱回火於 MOHO