ZnO晶体PVT法生长热动力学分析-微电子学与固体电子学专业论文.docxVIP

V V Abstract Title: The ZnO crystal PVT grown numerical simulation of thermodynamic and kinetic Major: Microelectronics and Solid State Electronics Candidate: Panru WU Signature: Supervisor: Associate prof. Jianping Ma Signature: Abstract Following GaN and SiC wide bandgap semiconductor field research focus is a Blu-ray， ultraviolet and near-ultraviolet band optoelectronic devices potential optoelectronic materials， ZnO. It is a set of crystal semiconductor light-emitting ， piezoelectric ， electro-optic ， flashing and other functions into one， it has than GaN twice as high as the exciton binding energy (60 meV)， has a good radiation resistance， can work in harsh environments such as space or nuclear applications. With the rapid development of GaN， SiC and other new optical materials industry， people need more used in-blue-violet laser， detectors， anti-radiation， high temperature， high-power electronic device material， large size， high quality ZnO crystals are increasingly high demand ， but also increased the people attaches great importance to the study of ZnO crystal growth. This paper first introduces several methods of ZnO crystal growth ， and compare the advantages and disadvantages of the various methods， and then use analysis software based on the finite element analysis and multi-physics coupling CFDRC suitable for simulation of three-dimensional PVT analysis of ZnO crystal heat of the growth system dynamics model， and on this basis， according to the characteristics of the PVT growth of ZnO crystal design method required for the growth of ZnO crystal PVT corundum crucible structure， appropriate placement of the thermal field ， the growth system numerical simulation. Then ， the combination of the material parameters of the actual growth furnace equipment designed a reasonable growth chamber temperature and pressure ， the ZnO crystal growth rate under different temperature and pressure was simulated. Finally ， the crucible accordi