bi3.15nd0.85ti3o12铁电薄膜的电离辐射效应分析word格式论文.docxVIP

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bi3.15nd0.85ti3o12铁电薄膜的电离辐射效应分析word格式论文.docx

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bi3.15nd0.85ti3o12铁电薄膜的电离辐射效应分析word格式论文

电常数的降低，从而导致晶界势垒高度的增加，最终使得漏电流降低。关键词：BNT铁电薄膜；电离辐射；剩余极化强度；电滞回线；漏电流AbstractFerroelectricmaterialshavebeenthesubjectofintensiveresearchfordecades duetotheirpromisingapplicationsinnonvolatilerandomaccessmemories(RAMs). Comparedtotraditionalmemorydevices,oneofthemajoradvantagesofthe ferroelectricRAMs is their exceptional radiation hardness,which makes them suitable candidatesforspaceandmilitary applications.Experimentalevidenceshowedthatthe radiationhardnessofPb(Zr,Ti)O3(PZT)exceeds5Mrad(Si).Unfortunately,PZT filmshaveseriousproblemssuchasfatigueandenvironmentalpollution.Compared toPZTfilms,Bi4?xNdxTi3O12(BNT)thinfilmshavemanyremarkableproperties, suchasbeingalmostfatigue-free,andthefactthattheyarelead-free.However,asa recentlydevelopedmaterial,theradiationhardnessofBNTfilmsisunknown. To addressthisissue,theionizingradiationeffectsofBNTferroelectricthinfilmswere investigatedinthisthesis.TheresultsshowthattheradiationhardnessoftheBNT films is at least 10 Mrad(Si), which is even better than that ofthe PZT films.First,BNTthinfilmswerefabricatedonPt/Ti/SiO2/SisubstratesbyaCSD method.Thecrystallinestructureofthepreparedsampleswascharacterizedbyx-ray diffraction(XRD).Thesamplesshowa typicalXRDpatternoftheBNTthinfilms.A singlephaseofthebismuth-layeredperovskitestructureisobservedwith(00l)and(117)mixedorientations.AtypicalsurfacemorphologyoftheBNTthinfilm, characterizedbyscanningelectronmicroscopy(SEM),showsthatthesurfacesofthe samplesaresmoothandcompact,thesizeofthegrainsare100nmto300nm.The hysteresisloopandtheleakagecurrentweremeasuredbyaRadiantTechnologies PrecisionWorkstationferroelectricanalyzer.Theremanentpolarization(2Pr)valueis52μC/cm2, the coercive field and theleakage currentaresmall.Second,thesamplesweresubjectedto5Mrad(Si)and10Mrad(Si)electron radiation.The hysteresisloops,2Prvaluesandthecurrent-voltagecurvearecompared beforeandafterradiation.Theradiationinducedlittlelossin2Pr,whiletheleakage currentwasreduced.Then,thesamplesweresubjectedto100Mrad(Si)γray radiation.Dis