algangan hemt器件场板结构的特色设计word格式论文.docxVIP

摘要GaN 基 HEMT 以其优异的特性，在大功率、高温和高频应用领域中备受人们 关注。尽管 AlGaN/GaN HEMT 器件有很多优势，但是电流崩塌以及击穿电压仍 然是阻碍其输出功率进一步提高的主要因素。而场板技术的出现，很好地解决了 这两个问题，极大地提高了 AlGaN/GaN HEMT 器件的微波大功率特性。本文设计并研究了不同场板结构对 AlGaN/GaN HEMT 的影响及其特性分析。 主要研究结果如下：（1）深入研究了场板对 AlGaN/GaN HEMT 的影响。（2）用 Silvaco-ATLAS 对场板结构 AlGaN/GaN HEMT 中电场分布进行仿真。 从而验证了场板结构能够提高击穿电压理论的正确性。（3）设计了浮空复合型场板结构，并从理论和仿真方面与无场板结构 HEMTs以及源场板结构 HEMTs 进行比对分析，给出了浮空复合场板结构的优化规律。（4）对浮空复合型场板结构 AlGaN/GaN HEMT 的特性进行分析，结果表明 浮空复合型场板 AlGaN/GaN HEMT 器件的直流特性与实际场板结构的 HEMT 器 件参数基本一致，但该结构的频率特性很好，适合微波大功率应用。（5）设计了不同结构的栅浮空场板结构的 AlGaN/GaN HEMT 器件并进行了 理论及特性分析。在相同长度的场板前提下，证明了多段栅浮空场板能够有效地 提高击穿电压。综上所述，本文对设计的不同场板结构 AlGaN/GaN HEMT 器件进行了一系 列的理论和仿真探究，对实际器件的设计和制备具有指导意义。关键字：AlGaN/GaN HEMTsSilvaco 仿真场板击穿电压AbstractGaN-based HEMT has drawn people’s attention in the fields of high power, high temperature and high frequency environment because of its excellent characteristics. Although AlGaN/GaN HEMTs have many advantages over others, current collapse and breakdown voltage are still the major factors which prevent them from further improving its output power. The field plate technology appears to solve these two problems, improving microwave high-power characteristic of the AlGaN/GaN HEMTs significantly.In the thesis, we design and research the influence of different types of filed plate on AlGaN/GaN HEMTs. Major achievements are listed as follows:Firstly, the influence of field plate on the AlGaN/GaN HEMT is studied deeply.Secondly, the electrical field distribution of AlGaN/GaN HEMT with field plate is simulated by Silvaco-ATLAS. The theory, in which the field plate structure can improve the breakdown voltage, is verified from the perspective of simulation.Thirdly, we design the floating composite field plate, and compare them with no FP HEMTs and source FP HEMTs from the respects of both theory and simulation. Then, the optimization rules of the structure of floating composite field plate are introduced.Fourthly, we analyze the characteristics of floating composite field plate AlGaN/