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Effective Schottky Barrier Height Lowering By TiN Capping Layer For TiSix/Si Power DiodeLin-Lin Wang, Wu Peng, Yu-Long Jiang*, and Bing-Zong LiAbstract—The TiSix/n-Si(100) Schottky power diode is fabricated by Ti silicidation and the Schottky barrier height (SBH) is found to be ~0.69 eV. For the first time, it is demonstrated that an 80 meV SBH reduction can be achieved by a TiN capping layer, which can lower ~15%self power consumption of the diode at a forward current of 20 A. It is revealed that the nitrogen atoms diffusion into the TiSix results in the SBH lowering, which is discovered by X-ray diffraction measurement, energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy.Index Terms—TiSix, Schottky diode, TiN capping layer, barrier height loweringIntroductionTHESchottky diode is extensively used as aswitch diode, which requires the on-voltage as small as possible to reduce theself power consumption since the forward current is normally very large.For the same forward current, a Schottky barrier height (SBH) decreasing of can directly result in an on-voltage lowering of , which indicates that reducing SBH is a very effective way to save the diode self power consumption[1], [2].For example, for an ideal Schottky diode with a SBH of 0.69 eV, the on-voltage is ~ 0.54 V for a forward current of 20 A. If the SBH can lower 80 meV, the on-voltage for the same current will be 0.46 V, which will significantly save 15 % (1.6 W) self power consumption. However, lowering the SBH is very challenging in the view of volume production. On one hand, employing low work function metal as the contact material, such as rare earth metal, may lead toa lower SBH, but these metals are readily oxidized and pinhole formation always accompanies during silicidation[3].On the other hand, lowering the SBH will result in the rapid increasing of reverse leakage.Fortunately, by means of trench metal-oxide-semiconductor field effect transistor (MOSFET) like structures, the Sc