单质铜颗粒掺杂的氧化亚铜复合薄膜制备 及物性研究.pdfVIP

Applied Physics 应用物理, 2015, 5(11), 131-136 Published Online November 2015 in Hans. /journal/app /10.12677/app.2015.511018 Fabrication and Physical Properties of Cu2O:Cu Composite Thin Films Liuyong Wang College of Physics, Optoelectronics and Energy of Soochow University, Suzhou Jiangsu rd th th Received: Oct. 23 , 2015; accepted: Nov. 6 , 2015; published: Nov. 11 , 2015 Copyright © 2015 by author and Hans Publishers Inc. This work is licensed under the Creative Commons Attribution International License (CC BY). /licenses/by/4.0/ Abstract Pulsed deposition method (PLD) was successfully used in the manufacture of Cu O and Cu O:Cu 2 2 composite thin films. The results showed that we could obtain the pure Cu2O film at 600˚C, and that the elemental copper particles occurred when the temperature rose to 700˚C. In addition, X-ray diffraction, atomic force microscopy and scanning electron microscope were used in the re- search of growth orientation and surface topography. The orientation between film and substrate is STO(001)//Cu2O(002)//Cu(002). Also the microstructure of the composite film was tested by transmission electron microscopy, but Cu particles or clusters’ size were too small; so we could hardly observe them directly. The absorption coefficient of the particles doped composite film is higher than the pure Cu2O film during some wavelength. Keywords Cu O:Cu, PLD, Particles Doped 2 单质铜颗粒掺杂的氧化亚铜复合薄膜制备 及物性研究 王刘勇 苏州大学物理与光电能源学部，江苏 苏州 文章引用: 王刘勇.