温度对Si上MOCVD鄄ZnO成核与薄膜生长特性的影响-发光学报.PDFVIP

第36卷摇 第4期 发摇 光摇 学摇 报 Vol郾36 No郾4 2015年4月 CHINESEJOURNAL OF LUMINESCENCE Apr. ,2015 文章编号:1000鄄7032(2015)04鄄0408鄄05 温度对 Si上MOCVD鄄ZnO成核与薄膜生长特性的影响 崔夕军,庄仕伟,张金香,史志锋, * 伍摇 斌,董摇 鑫,张源涛,张宝林 ,杜国同 (集成光电子学国家重点联合实验室 吉林大学电子科学与工程学院,吉林 长春摇 130012) 摘要:采用金属有机化学气相沉积(MOCVD)方法在Si衬底上进行了ZnO 的成核与薄膜生长研究。 ZnO薄 膜的形貌和结晶特性由成核和后期生长过程共同决定,初期成核温度决定了其尺寸和密度,进而影响后期 ZnO主层的生长行为,但由于高温对后期ZnO纳米柱横向生长的抑制,纳米柱的尺寸并没有因为成核尺寸的 增大而变大,因此在560 益得到了晶柱尺寸最大、密度最小的ZnO薄膜。 最后通过改变成核温度,优化了ZnO 外延膜的结晶质量。 关摇 键摇 词:ZnO;MOCVD;成核;薄膜 中图分类号:O484.4 摇 摇 摇 文献标识码:A摇 摇 摇 DOI:10.3788/ fgx0408 Effect of Temperature on The Nucleation and Epitaxial Films of ZnO on Si Substrates Grown by MOCVD CUI Xi鄄jun,ZHUANG Shi鄄wei,ZHANGJin鄄xiang,SHI Zhi鄄feng, * WU Bin,DONG Xin,ZHANG Yuan鄄tao,ZHANG Bao鄄lin ,DU Guo鄄tong (StateKey Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China) *Corresponding Author,E鄄mail:zbl@ Abstract:The nucleation and epitaxial films of ZnO on Si substrateswere investigated by metal鄄or鄄 ganic chemical vapor deposition (MOCVD). As is known to all,the morphology and crystalline quality of ZnO are determined by both the nucleation and epitaxy process. In this paper,the effect of temperature on the growth of ZnOfilmsby MOCVDwasinvestigated intermsof thesetwoproces鄄 ses separately. It isfound that the temperature has a great influence on the nucleation process and the following epitaxial growth. Because high temperature has suppression on the lateral growth of ZnO nanorods,thediametersof nanor