Etch rates for micromachining processingpart II ...（腐蚀率微加工processingpart二世u2026u2026）.pdfVIP

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003 761 Etch Rates for Micromachining Processing—Part II Kirt R. Williams, Senior Member, IEEE, Kishan Gupta, Student Member, IEEE, and Matthew Wasilik Abstract— Samples of 53 materials that are used or potentially be used in future fabrication of microelectromechanical systems can be used or in the fabrication of microelectromechanical (MEMS) and integrated circuits (ICs) (approximately 50 etch systems and integrated circuits were prepared: single-crystal rates measured in the earlier paper have been included in this silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, one). These data allow the selection of new combinations of graphite, fused quartz, Pyrex 7740, nine other preparations of structural material, underlying material, and etchant for micro- silicon dioxide, four preparations of silicon nitride, sapphire, machining. two preparations of aluminum oxide, aluminum, Al/2%Si, tita- Table I summarizes the etches tested, abbreviated names for nium, vanadium, niobium, two preparations of tantalum, two the etches, and the target materials for each. Table II lists etch preparations of chromium, Cr on Au, molybdenum, tungsten, rates of Si,Ge, SiGe, and C in the SI units of nm/min (not /min nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80 Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C, as in the earlier tables) [3]. Table III covers films and wafers that and spin-on polyimide. Selec