Design And Application Guide For High Speed （为高速设计和应用指导）.pdfVIP

Design And Application Guide For High Speed MOSFET Gate Drive Circuits By Laszlo Balogh ABSTRACT The main purpose of this paper is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special chapter deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. Several, step-by-step numerical design examples complement the paper. INTRODUCTION MOSFET – is an acronym for Metal Oxide sourcing and sinking sufficient current to provide Semiconductor Field Effect Transistor and it is for fast insertion and extraction of the controlling the key component in high frequency, high charge. From this point of view, the MOSFETs efficiency switching applications across the have to be driven just as “hard” during turn-on electronics industry. It might be surprising, but and turn-off as a bipolar transistor to achieve FET technology was invented in 1930, some 20 comparable switching speeds. Theoretically, the years before the bipo