镍铬薄膜电阻器噪声特性研究 investigation of noise properties in nicr thin-film resistor.pdfVIP

第 期 电 子 元 件 与 材 料 1 Vol.25 No.1 年 月 ELECTRONIC COMPONENTS MATERIALS 2006 1 Jan. 2006 研究与试制研究与试制 研究与试制研究与试制 R D 镍铬薄膜电阻器噪声特性研究 1 2 1 3 2 吴 勇 杜 磊 庄奕琪 魏文彦 仵建平 摘要: 1.5 kΩ1 000 h 1 /f 关键词: 1 /f g-r 中图分类号: TM54 文献标识码:A 文章编号:1001-2028 2006 01-0055-04 Investigation of Noise Properties in NiCr Thin-film Resistor 1 2 1 3 2 WU Yong , DU Lei , ZHUANG Yi-qi , WEI Wen-yan , WU Jian-ping (1. School of Microelectronic of Xidian University, Xi’an 710071, China; 2. School of Technical Physics of Xidian University Xi’an 710071, China 3. China Aerospace Times Electronics Corp. No.771 Research Institute, Xi’an 710054, China) Abstract: Low frequency noise of thin-film resistor associate with it’s micro-structures and technics closely. Low frequency noise data in different periods of three 1.5 kΩ NiCr thin-film resistors was measured. The resistor’s noise characters and sources were discussed, the methods of reducing the noise were given. Furthermore, relationships between 1/ f noise and electromigration in NiCr thin-film resistor were analyzed, the abnormal changes of noise can indicate electromigration destroy clearly. Key words: electronic technology; NiCr thin-film resistor; low frequency noise; 1/ f noise; g-r noise; noise sources; electromigration 薄膜电阻与厚膜电阻相比 性能稳定 易于集成