银掺杂氧化锌薄膜的溶胶-凝胶法制备及表征-Journalof.PDFVIP

第32 卷第12期 东 北 大 学 学 报 ( 自 然 科 学 版 ) Vol. 32, No. 12 2 0 1 1 年 12 月 Journal of Northeastern U ni ersity( Natural Science) D ec. 2 0 1 1 - 李建昌, 姜永辉, 单麟婷, 巴德纯 ( , 110819) : - , Si, IT O Ag ZnO . X , . : Ag , ZnO Ag , 404 nm Ag , ZnO , 85% . Ag 7% , , 90% . : - ; ; Ag ; ; : O 484. 4 : A : 1005-3026( 20 11) 12- 1753-04 Preparation and Characterization of Ag Doped ZnO Thin Films by So-l Gel Method LI Jian-chang , JIAN G Yong-hui, SHAN L in-ting, BA De-chun ( School of Mechanical Engineering Automation, Northeastern Uni ersity, Shenyang 110819, China. Corresponding author : LI Jian-chang, E-mail: andyljc @ foxmail. com) Abstract Ag-doped ZnO thin films w ere fabricated on silicon substrate with different Ag doping concentrations by sol-gel method. The samples w ere characterized by X-ray diffraction, scanning electron microscopy, ultra iolet- isible spectrophotometer and current- oltage measurement, respecti ely. T he effects of Ag doping on the structure, surface topography and electrical properties of ZnO thin films w ere in estigated. The results showed that the elemental Ag is generated in ZnO thin films w ith the addition of Ag and the increasing of the doping concentration, and a new absorption peak appears at 404 nm, w hich is probably induced by the formation of Ag nano-particles. At the same time, the conducti ity of Ag-doped ZnO thin films is ob iously impro ed and the film transmittance in the isible region is all abo e 85% . When the doping concentration is 7at% , the sample show s the best conducti ity w ith isible transmittance greater than 90%. Key words sol-gel method; ZnO thin film ; Ag doping; electrical p