半导体制备技术简介CH07课件.ppt

Chapter 7 Plasma Basic;Objectives;Topics of Discussion;Applications of Plasma;What Is Plasma;Components of Plasma;Ionization Rate;Neutral Gas Density;Parallel Plate Plasma System;Generation of a Plasma;Ionization;Illustration of Ionization;Excitation-Relaxation;Excitation Collision;Relaxation;Dissociation;Dissociation;Plasma Etch;Plasma Enhanced CVD;Q A;Q A;Table 7.1 Silane Dissociation;Q A;Mean Free Path (MFP);MFP Illustration;Mean Free Path (MFP);Q A;Movement of Charged Particle;Movement of Charged Particle;Thermal Velocity;Magnetic Force and Gyro-motion;Gyro-motion;Gyrofrequency;Gyro radius;Energy, E;Ion Bombardment ;Ion Bombardment ;Sheath Potential;Applications of Ion bombardment ;Plasma Potential DC Bias;DC biases and RF powers ;Ion Bombardment;Ion Bombardment Control;DC Bias of CVD Chamber Plasma;DC Bias of Etch Chamber Plasma;DC Bias of Etch Chamber Plasma;Question and Answer;Question and Answer;Ion Bombardment and Electrode Size;Advantages of Using Plasma;Benefits of Using Plasma For CVD Process;Comparison of PECVD and LPCVD;Gap Fill by HDP-CVD ;HDP CVD Void-free Gap Fill;Benefits of Using Plasma For Etch Process;Benefits of Using Plasma For PVD Process;PECVD and Plasma Etch Chambers;PECVD Chambers;Schematic of a PECVD Chamber;Plasma Etch Chambers;Plasma Etch Chambers;Plasma Etch Chambers;Schematic of an Etch Chamber;Remote Plasma Processes;Process gases;Photoresist Strip;Photoresist Strip Process;Remote Plasma Etch;NF3;Remote Plasma Clean;Remote Plasma Clean;NF3;Remote Plasma CVD (RPCVD);High-density Plasma;Limitation of Parallel Plate Plasma Source;Limitation of Parallel Plate Plasma Source;ICP and ECR;Inductively Coupled Plasma (ICP);Inductively Coupled Plasma (ICP);Illustration of Inductive Coupling ;Schematic of ICP Chamber ;Application of ICP;ECR;ECR;Illustration of ECR;Helium;ECR;Application of ECR;Summary;Summary