标准CMOS工艺下单片集成光接收芯片的研究-Core.PDF

SEMICON UCTOR OPTOELECTRONICS Vol. 30 No.1 Feb. 2009 CMOS 陈 伟, 程 翔, 卞剑涛, 陈 朝, 芦 晶 ( , 361005) : 设计了与标准CMOS 工艺兼容的850 nm 空间调制(Spatially Modulated, SM) 结构 光电探测器,在分析器件物理模型的基 上, 建立了SP CT R 环境中等效电路的新模型提出标 准CMOS 工艺下SM 探测器与前置放大电路单片集成的电路设计仿真结果表明, 在 850 nm 光 照下, SM 探测器带宽达到400 MHz, 并提供62 mA/ W 的响应度整 个集成芯片的工作速率为 400 Mb/ s, 增益为0. 81kV/ W, 功耗为91mW : ; CMOS; ; SPIC ; : TN491 : A : 1001- 5868(2009) 01- 0034- 04 Monolithically IntegratedOptical Receiverwith Spatially Modulated Optical etector in CMOS Technology CH N Wei, CH NG Xiang, BIAN Jiantao, CH N Chao, LU Jing ( ept. of Mechanical andElectrical, Xiamen University, Xiamen 361005, CHN) Abstract: A monolithically integrated optical receiver( = 850nm) with spatially modulated (SM) optical detector is designed in standard 0. 5 m CMOS technology, the equivalent circuit model of the SM light detector is built in the SP CTR environment. Simulation results show that the SM optical detector researches a bandwidth of 420 MHz and a responsibility of 78 mA/ W. O IC has a bandwidth of 400 Mb/ s and gain of 0. 81kV/ W with the power dissipation of 91 mW. Key words: O IC; CMOS; spatially modulation; SPIC model; preamplifier 0 pn , IC (Bipolar, CMOS, BiCMOS SOI , ) ( O IC) [ 1] 780 nm , + n / nWell/ pSub , 0.25A/ CMOS O IC [ 2] W, 14. 4 MHz , O IC 850 nm 850 nm ( Spatially Modulated, SM)