Bolt Down Mounting Method for High Power RF （用插销固定安装方法高功率射频）.pdfVIP

Freescale Semiconductor AN3263 Application Note Rev. 0, 6/2006 Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages By: Mahesh Shah, Richard Wetz, Lindsey Tiller, Leonard Pelletier, Eddie Mares and Jin-wook Jang INTRODUCTION qualified to the highest quality standards in the commercial semiconductor industry; namely, automotive quality The purpose of this application note is to provide Freescale standards such as the AEC specification. In the mid-1990s, Semiconductor customers with a guide for mounting high Freescale pioneered the introduction of high power OMP power RF transistors and integrated circuits in Over-Molded packaging technology into high frequency, high power Plastic (OMP) packages by bolting down instead of soldering applications. Later, we advanced this technology from down. This guide is intended to aid customers in developing discrete devices to multi-lead integrated circuit (IC) devices. an assembly process suitable for their design as well as their Today, we offer RF power transistors and IC devices in OMP manufacturing operation. Each Power Amplifier (PA) design packages that are capable of an RF output of over 100 Watts has its own unique characteristics. Similarly, each and a frequency range up to 2 GHz. We continue to offer manufacturing operation also has its own process capabilities metal-ceramic Air Cavity (AC) packages a