Abhijeet Kshirsagar , Pradeep Nyaupane , （Abhijeet Kshirsagar Pradeep Nyaupane,）.pdfVIP

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD Abhijeet Kshirsagar a,b , Pradeep Nyaupane a , Dhananjay Bodas c,∗ , S.P. Duttagupta a , S.A. Gangal b a Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India b Department of Electronics Science, University of Pune, Pune 411007, India c Centre for Nanobioscience, Agharkar Research Institute, GG Agarkar road, Pune 411004, India a r t i c l e i n f o a b s t r a c t Article history: Silicon nitride films have been deposited at a low temperature (70 ◦ C) by inductively coupled plasma Received 20 December 2010 chemical vapor deposition (ICP-CVD) technique and their physical and chemical properties were studied. Received in revised form 4 January 2011 For a deposited SiN sample, -phase was observed and refractive index of 2.1 at 13.18 nm/min deposition Accepted 4 January 2011 rate was obtained. The attained stress of 0.08 GPa is lower as compared to the reported value of 1.1 GPa Available online 12 January 2011 for SiN thin films. To study the deposited film, characterization was performed using X-ray photoelectron spectra (XPS), X-ray diffraction (XRD), micro Raman spectroscopy, Fourier transfer infrared spectroscopy Keywords: (FTIR), cross-section scanning electron microscopy (SEM) and atomic force microscopy (AFM). Silicon nitride Inductively coupled plasma © 2011 Elsevier B.V. All rights reserved. Low temperature 1. I