MRF8S18120HR3;MRF8S18120HSR3;MRF8S18120HSR5;MRF8S18120HR5;中文规格书,Datasheet资料.pdf

Freescale Semiconductor Document Number: MRF8S18120H Technical Data Rev. 1, 10/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8S18120HR3 Designed for GSM and GSM EDGE base station applications with frequen- MRF8S18120HSR3 cies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW 1805--1880 MHz, 72 W CW, 28 V Gps ηD GSM, GSM EDGE Frequency (dB) (%) LATERAL N--CHANNEL 1805 MHz 18.2 49.8 RF POWER MOSFETs 1840 MHz 18.6 51.4 1880 MHz 18.7 53.9 • Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW CASE 465--06, STYLE 1 • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = NI--780 46 Watts Avg.