太阳能电池PECVD薄膜(国外英文资料).docVIP

太阳能电池PECVD薄膜(国外英文资料) Crystalline silicon solar cell Study on PECVD SiNx: H film process Li Qin Liu (Department of mechanical and electrical engineering, Suqian College Jiangsu, Suqian 223800) Abstract By studying on the industrial production line PECVD deposition SiNx: the process temperature and gas flow rate in the H film process The effects of thickness and refractive index, process gas flow rate and RF power on the photoelectric conversion efficiency, open circuit voltage and short circuit of crystalline silicon solar cells are also discussed Influence of road current CLC number: TK573; TN 80619, document mark code: A Process, Research, on, PECVD, SiN2x: H, Film, for, Crystalline,, Silicon, Solar, Cells Finally, the study is carried out Passivation effect of PECVD on different types of crystalline silicon cells. The result shows With the gas Si H4 traffic increase SiNx: the thickness and refractive index of the H film rise As the temperature rises SiNx: the thickness of the H film rises first and then decreases The refractive index has no obvious change Chemical law For polycrystalline silicon solar cells Process gas N, H3, and Si H4 traffic ratio is 11 Photoelectric conversion efficiency is the highest With radio frequency work From the rate of Increase of 2800 W 4200 W, photoelectric conversion efficiency first rise and then decline Peak value reached at 3700 W Direct, Plasma, PECVD, yeah The passivation effect of polycrystalline silicon solar cells is better than that of monocrystalline silicon solar cells. Key word Crystalline silicon solar cells PECVD; SiNx: H film LIU Liqin (Department, of, Mechanical, and, Electrical, Engineering, Suqian, College, Suqian, 223800, China) Abstract: In, this, paper, the, influence, of, temperature, and, gas, flow, on, the, thickness,, and, refractive, index, film, of, SiNx: H, And, theinfluenceof, gasflowandradiofrequencypoweronopto2electric, conversion, efficiency, open, circuit, voltage, and, short Circuit, current, of, cr