61C256英文数据手册.pdfVIP

IC61C256AH Document Title 32K x 8 High Speed SRAM Revision History Revision No History Draft Date Remark 0A Initial Draft March 23,2001 0B Revise typo of tHA on page 7 October 18,2001 0C Add SOP package type February 18,2002 0D Revise typo of sop size at page 2,9 April 19,2002 The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. 1 AHSR010-0D 4/19/2002 IC61C256AH 32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access times: 10, 12, 15, 20, 25 ns The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs • Low active power: 400 mW (typical) high-performance CMOS technology. This highly reliable pro- • Low standby power cess coupled with innovative circuit design techniques, yields -- 250 µW (typical) CMOS standby access times as fast as 8 ns maximum. -- 55 mW (typical) TTL standby When CE is HIGH (deselected), the device assumes a standby • Fully static operation: no clock or refresh mode at which the power dissipation