11-AlNO增透膜《真空科学和技术学报》.pdfVIP

31 5 652 CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY 2011910 AlN O x y * 池华敬 熊 凯 郭 帅 许 丽 王 双 陈 革 章其初 ( 253000) Preparation of Transmittance-Increasing AlN O Film by x y Vacuum Magnetron Reactively Sputtering and ydrothermal Oxidation Method * Chi Huajing , Xiong Kai, Guo Shuai, Xu Li,Wang Shuang, Chen Ge, Zhang Qi hu (Research and Development Centerf or Coatings, Himin Solar Co. Ltd, Dezhou 253000, China) Abstract The translu ent A-l AlN ermet thin film are deposited on 32 mm thi kness low- iron glass substrate by magnetron rea tive sputtering using Al target in the atmosphere of Ar and N .The transmittan e-in reasing film of AlN O 2 x y with surfa e roughness are made after hydrothermal oxidation in boiling pure water for a ertain time. For a 32 mm thi k- ness low-iron glass with a AlN O film obtained by oxidation a 120 nm thi kness A-l AlN film in boiling water for 8 min, x y the measured solar light transmittan e e is 935%, and the visible light transmittan e v is 952%. For a glass that both sides is oated, e and v are 956% and 97% respe tively, while for un oated glass, the two values are 904% and 916%. Keywords Transmittan e- in reasing film, Rea tively sputtering, Hydrothermal oxidation, Thin films, Cermet, A-l AlN, AlN, Al2O3,AlNx Oy 32mm Al Ar N ,