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Molecular beam epitaxy growth and characterization of typeII InAsGaSb.pdf

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Molecular beam epitaxy growth and characterization of typeII InAsGaSb

Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection E. Plis,a A. Khoshakhlagh, S. Myers, H. S. Kim, N. Gautam, Y. D. Sharma, and S. Krishna Center for High Technology Materials, University of New Mexico, 1313 Goddard St SE, Albuquerque, New Mexico 87106 S. J. Lee and S. K. Noh Korea Research Institute Standards and Science (KRISS), 1 Doryongdong, Yuseong-gu, Daejeon 305-600, Republic of Korea Received 29 September 2009; accepted 30 November 2009; published 23 March 2010 The authors report on investigation of type-II InAs/GaSb and InAs/InxGa1?xSb strained layer superlattices SLSs for long-wave infrared detection. Growth conditions were optimized to obtain nearly lattice matched a /a0.03% 13 ML InAs/7 ML GaSb SLS nBn detector structure with cutoff wavelength of 8.5 m 77 K. Dark current density was equal to 3.210?4 A /cm2 Vb =+50 mV, 77 K for this detector structure. Thin 10 ML InAs/6 ML In0.35Ga0.65Sb SLS was grown with zero lattice mismatch achieved by incorporation of 2.5 ML of GaAs in every SLS period. ? 2010 American Vacuum Society. DOI: 10.1116/1.3276429I. INTRODUCTION Photodetectors operating in the long-wave infrared LWIR, 8–14 m spectral band are of great importance for military and commercial applications of infrared IR ther- mal imaging. It includes satellite-based surveillance, atmo- spheric pollution probes, and astrophysical imaging, to name just a few. Detectors based on mercury-cadmium-telluride MCT HgxCd1?xTe material system have been the domi- nant IR technology for such applications. However, the low- band gap MCT alloys are sensitive to small changes in the alloy composition ratio, and poses short lifetimes due to strong Auger recombination rates. Moreover, MCT detectors are characterized by low electron effective mass resulting in excessive dark current due to tunneling.1 Since first proposed in the 1980s Refs. 2 and 3 InAs/ InGaSb strai