IRFS4127TRLPBF;IRFSL4127PBF;中文规格书,Datasheet资料.pdfVIP

09/16/08 1 HEXFET

Power MOSFET Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits S D G IRFS4127PbF IRFSL4127PbF G D S Gate Drain Source S D G D D S G D2Pak IRFS4127PbF TO-262 IRFSL4127PbF VDSS 200V RDS(on) typ. 18.6m max. 22m ID 72A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery
V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy  mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case  ––– 0.4 RθJA Junction-to-Ambient  ––– 40 Max. 72 51 300 10lbin (1.1Nm) 300 375 57 -55 to + 175 ± 20 2.5 °C/W 250 See Fig. 14, 15, 22a, 22b, PD - 96177 /
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Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.26mH RG = 25?, IAS = 44A, VGS =10V. Part not recommended for use above this value .  ISD ≤ 44A, di/dt ≤ 760A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.  Pulse width ≤ 400μs; duty cycle ≤ 2%. S D G  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  When m