IRGP4086PBF;中文规格书,Datasheet资料.pdfVIP

1 4/17/08 IRGP4086PbF Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Features  Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery Circuits in PDP Applications  Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency  High Repetitive Peak Current Capability  Lead Free Package    G C E Gate Collector Em itter TO-247AC G C E C  E C G n-channel VCE min 300 V VCE(ON) typ. @ IC = 70A 1.90 V IRP max @ TC= 25°C  250 A TJ max 150 °C Key Parameters Absolute Maximum Ratings Parameter Units VGE Gate-to-Emitter Voltage V IC @ TC = 25°C Continuous Collector Current, VGE @ 15V A IC @ TC = 100°C Continuous Collector, VGE @ 15V IRP @ TC = 25°C Repetitive Peak Current  PD @TC = 25°C Power Dissipation W PD @TC = 100°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)  ––– 0.8 RθCS Case-to-Sink (flat, greased surface) 0.24 ––– °C/W RθJA Junction-to-Ambient (typical socket mount)  ––– 40 Weight 6.0 (0.21) ––– g (oz) 250 300 -40 to + 150 10lbin (1.1Nm) 160 63 1.3 Max. 40 70 ±30 /    2  Half sine wave with duty cycle = 0.1, ton=2μsec.  Rθ is measured at     Pulse width ≤ 400μs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVCES Collector-to-Emitter Breakdown Voltag 3