12A02CH-TL-E;中文规格书,Datasheet资料.pdf

12A02CH No.7482-1/6 Applications ? Low-frequency Amplifi er, high-speed switching, small motor drive, muting circuit Features ? Large current capacity ? Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=285mΩ [IC=1A, IB=50mA] ? Small ON-resistance (Ron) Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --15 V Collector-to-Emitter Voltage VCEO --12 V Emitter-to-Base Voltage VEBO --5 V Collector Current IC --1 A Collector Current (Pulse) ICP --2 A Collector Dissipation PC Mounted on a ceramic board (600mm 2×0.8mm) 700 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions unit : mm (typ) 7015A-003 Ordering number : EN7482A 82212 TKIM/O2203 TSIM TA-100610 SANYO Semiconductors DATA SHEET 12A02CH PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifi er Applications /en/network/ Product Package Information ? Package : CPH3 ? JEITA, JEDEC : SC-59, TO-236, SOT-23 ? Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection 3 2 1 A D LO T N o. TL 12A02CH-TL-E 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 2.9 0.05 0.4 2. 8 1. 6 0. 2 0. 6 0. 6 0. 9 0. 2 0.15 21 3 0.95 / 12A02CH No.7482-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB= --12V, IE=0A --100 nA Emitter Cutoff Current IEBO VEB= --4V, IC=0A --100 nA DC Current Gain hFE VCE= --2V, IC= --10mA 300 700 Gain-Bandwidth Product fT VCE= --2V, IC= --50mA 450 MHz Output Capacitance Cob VCB= --10V, f=1MHz 6 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC= --400mA, IB= --20mA --120 --240 mV Base-to-Emitter Saturation Voltage VBE(sat) IC= --400mA, IB= --20mA --0.9 --1.2 mV Collector-to-Base Breakdown Voltage V(BR)CBO IC= --10μA, IE=0A --15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE=∞ --12 V Emitter-to-Base Breakdown Vo